High-Purity Tungsten Crucible for Sapphire Crystal Growth
High-Purity Tungsten Crucible for Sapphire Crystal Growth
Key Advantages:
✓ Ultra-high density
✓ Low thermal expansion & deformation
✓ Custom dimensions (OD 10-200mm, thickness 1-20mm)
✓ Surface polishing & drilling options
Grade:
|
GB grade |
W |
Mo |
Ni |
|
W1 |
99.95% |
0.01 |
0.003 |
|
WAL1、WAL2 |
99.95% |
0.01 |
0.005 |
|
REMARKS: IMPURITIES ACCORDING TO GB/T 3875-2006 |
|||
Specification:
|
D(Tolerance) |
L(Tolerance) |
surface |
|
10~500 |
10~750 |
Raw, Turned, polished |
|
Condition |
Specification（mm） |
tolerance（mm） |
||
|
Diameter（mm） |
Length（mm） |
Diameter（mm） |
Length （mm） |
|
|
Sintering |
10-500 |
10-750 |
±5 |
±5 |
|
Forging |
10-100 |
10-120 |
±1 |
±2 |
|
Sintering and Machining |
100-450 |
10-500 |
±0.5 |
±1 |
Applications Section:
1. Crystal Growth(Sapphire, SiC, LiTaO)
2.Vacuum Evaporation & Coating(PVD, E-beam)
3.Semiconductor Processing(AlN, GaN substrates)
4.High-Purity Melting(Rare earth metals, oxides)
