Tungsten Sputtering Target for Semiconductor & Solar Cell Coating
Tungsten Sputtering Target for Semiconductor & Solar Cell Coating
Key Features:
✔ExceptioDensity nal- 19.3 g/cm³ for superior radiation shielding
✔Extreme Heat Resistance- Withstands 3400°C melting point
✔Precision Tolerances- ±0.05mm (Standard), ±0.02mm (Precision Grade)
✔Surface Options- Mirror polish (Ra<0.4μm) or ground finish
Grade:
GB grade |
W |
Mo |
Ni |
W1 |
99.95% |
0.01 |
0.003 |
WAL1、WAL2 |
99.95% |
0.01 |
0.005 |
REMARKS: IMPURITIES ACCORDING TO GB/T 3875-2006 |
Specification:
L (Tolerance) |
W(Tolerance) |
T(Tolerance) |
surface |
500~600mm |
10~500mm |
0.05~50mm |
Raw, Turned, polished |
Thinckness |
Tolerance |
Width |
Tolerance |
Length |
Tolerance |
Condition |
<0.2 |
±0.02 |
10~150 |
±2 |
500 |
±2 |
Cold rolling |
0.3 |
±0.03 |
10~250 |
±2 |
500 |
±2 |
|
0.4 |
±0.04 |
10~250 |
±2 |
500 |
±2 |
|
0.5 |
±0.05 |
10~300 |
±2 |
500 |
±2 |
|
0.8 |
±0.07 |
10~300 |
±0.5 |
500 |
±0.5 |
|
1.0 |
±0.08 |
10~300 |
±0.5 |
600 |
±0.5 |
|
1.5 |
±0.12 |
10~400 |
±0.5 |
600 |
±0.5 |
|
2.0 |
±0.12 |
10~500 |
±0.5 |
700 |
±0.5 |
|
3.0 |
±0.20 |
10~500 |
±0.5 |
600 |
±0.5 |
hot rolling |
4.0 |
±0.30 |
10~500 |
±0.5 |
600 |
±0.5 |
|
≥5.0 |
±0.40% |
10~550 |
±0.5 |
600 |
±0.5 |
Applications Section:
Ideal for Demanding Industries:
1. Medical - Radiation shielding for CT/X-ray equipment
2. Semiconductor - High-purity sputtering targets
3. Aerospace - Rocket nozzle heat shields
4. Energy - Fusion reactor first wall materials