Molybdenum Sputtering Targets: Enabling Precision Semiconductor Fabrication

In modern semiconductor manufacturing, molybdenum (Mo) sputtering targets have become indispensable for critical deposition processes. These high-purity targets (typically 99.95%-99.99%) enable precise thin-film formation through physical vapor deposition (PVD), particularly in advanced logic and memory chip production.

Key Semiconductor Applications:

1. Back-End-of-Line (BEOL) Interconnects:

• Mo films serve as adhesion layers and diffusion barriers in multilayer metallization

• Deposited via DC magnetron sputtering at 2-5 mTorr argon pressure

• Enable reliable copper interconnects at nodes below 7nm

• Critical for 3D IC packaging with aspect ratios exceeding 10:1

1. Through-Silicon Via (TSV) Technology:

• Forms 50-100nm barrier layers preventing Cu diffusion

• Processed at 200-400°C with excellent step coverage

• Enables vertical stacking in high-bandwidth memory (HBM)

1. Emerging 2D Semiconductor Integration:

• Direct deposition of MoS₂ channels for next-gen transistors

• Precise thickness control down to monolayer levels

• Compatible with wafer-scale production

Process Advantages:

• Superior thermal stability maintains film integrity during subsequent annealing

• Low resistivity (5.34 μΩ·cm) minimizes signal delay

• Excellent etch selectivity (>20:1) in advanced patterning

Recent innovations include:

• Ultra-high purity (6N) targets for quantum devices

• Nano-grained structures enabling low-temperature deposition

• Rotary target designs improving utilization to >80%

As the industry advances to gate-all-around (GAA) transistors and 3D IC architectures, molybdenum's unique properties position it as a material of choice for next-generation semiconductor manufacturing.