High-Purity Tungsten Tube For Semiconductor
High-Purity Tungsten Tube For Semiconductor
Our tungsten tubes are manufactured through advanced powder metallurgy and precision machining processes, offering unmatched performance in extreme environments. With a melting point of 3422°C (6192°F) and exceptional thermal/mechanical stability, they outperform molybdenum and graphite alternatives in critical applications.
Key Advantages
✓ Seamless Construction - Eliminates weak points in high-stress environments
✓ Low Thermal Expansion - Coefficient of 4.5×10⁻⁶/K (20-1000°C)
✓ Vacuum Compatibility - Outgassing rate <10⁻⁶ Torr/sec
✓ Custom Fabrication - Flanges, threads, and coatings available
Grade:
|
GB grade |
W |
Mo |
Ni |
|
W1 |
99.95% |
0.01 |
0.003 |
|
WAL1、WAL2 |
99.95% |
0.01 |
0.005 |
|
REMARKS: IMPURITIES ACCORDING TO GB/T 3875-2006 |
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Specification:
|
D(Tolerance) |
T(Tolerance) |
surface |
|
30~500 |
2~30 |
Raw, Turned, polished |
|
Diameter（mm) |
thickness（mm） |
length（mm) |
|
30-50 |
2-10 |
<1300 |
|
50-100 |
3-15 |
|
|
100-150 |
3-15 |
|
|
150-200 |
5-20 |
|
|
200-300 |
8-20 |
|
|
300-400 |
8-30 |
|
|
400-450 |
8-30 |
|
|
450-500 |
8-30 |
Industrial Applications
Semiconductor Equipment
• CVD/PVD reactor liners
• Diffusion furnace components
Medical Technology
• X-ray collimators and shielding
• Proton therapy beam guides
Energy & Research
• Solar cell manufacturing fixtures
• Particle accelerator components
High-Temp Processing
• Sapphire crystal growth crucibles
• High-purity metal evaporation systems
